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| DATA SHEET MOS INTEGRATED CIRCUIT PD16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The PD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as compared with that of the conventional charge pump driver. Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD. FEATURES * Low ON resistance (sum of ON resistance of top and bottom FETs) RON1 = 2.0 TYP. * Low current consumption: IDD = 100 A MAX. * Four input modes independently controlling dual H bridge drivers * Stop and Brake modes selectable * Surface-mount mini-mold package: 16-pin plastic SOP (300 mil) PIN CONFIGURATION (Top View) VM1 1A PGND1 2A VDD IN1 IN3 IN2 1 2 3 16 15 14 NC 1B PGND2 2B VM2 SEL IN4 DGND PD16814GS 4 5 6 7 8 13 12 11 10 9 ORDERING INFORMATION Part Number Package 16-pin plastic SOP (300 mil) PD16814GS The information in this document is subject to change without notice. Document No. S10112EJ4V0DS00 (4th edition) Date Published August 1997 N Printed in Japan (c) 1997 PD16814 BLOCK DIAGRAM VDD 5 VM 1 IN1 6 CONTROL CIRCUIT 1 IN2 8 "H" BRIDGE 1 15 3 SEL 11 12 IN3 7 IN4 10 CONTROL CIRCUIT 2 "H" BRIDGE 2 4 13 DGND 9 14 2 VM1 + 1A 1B PGND1 VM2 2A 2B PGND2 FUNCTION TABLE * In Stop mode (SEL = High) Excitation Direction ---- H2R H2F ---- H1R <3> <2> H1R H1F <4> <1> H1F ---- H2R H2F ---- IN1 L L L L L L L L H H H H H H H H IN2 L L L L H H H H L L L L H H H H IN3 L L H H L L H H L L H H L L H H IN4 L H L H L H L H L H L H L H L H H1 S S S S R R R R F F F F S S S S H2 S R F S H1 F S R F S S R F <4> <1> H2 R H2 F <3> H1 R <2> S S R F S 2 PD16814 * In Brake mode (SEL = Low) Excitation Direction ---- H2R H2F ---- H1R <3> <2> H1R H1F <4> <1> H1F ---- H2R H2F ---- F: Forward IN1 L L L L L L L L H H H H H H H H IN2 L L L L H H H H L L L L H H H H IN3 L L H H L L H H L L H H L L H H S: Stop IN4 L H L H L H L H L H L H L H L H H1 B B B B R R R R F F F F B B B B B: Brake H2 B R F B B R F B B R F B B R F B R: Reverse FORWARD VM REVERSE VM STOP VM BRAKE VM ON OFF OFF ON OFF OFF OFF OFF A B A B A B A B OFF ON ON OFF OFF OFF ON ON 3 PD16814 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Parameter Supply voltage (motor block) Supply voltage (control block) Power dissipation Symbol VM VDD Pd1 Pd2 Instantaneous H bridge driver current Input voltage Operating temperature Junction temperature Storage temperature ID (pulse) VIN TA Tj MAX. Tstg Ratings -0.5 to +7 -0.5 to +7 0.862Note 1 1.087Note 2 1.0Note 2,3 -0.5 to VDD + 0.5 0 to 60 150 -55 to +125 A V C C C Unit V V W Notes 1. IC alone. 2. When mounted on board (100 x 100 x 1 mm, glass epoxy) 3. t 5 ms, Duty 40% Pd vs. TA Characteristics 1.2 When mounted on board 1.0 IC alone Average power dissipation Pd (W) 0.8 0.6 0.4 0.2 0 20 40 60 80 Ambient temperature TA (C) 4 PD16814 RECOMMENDED OPERATING CONDITIONS (TA = 25 C) Parameter Supply voltage (motor block) Supply voltage (control block) H bridge drive currentNote Operating temperature Symbol VM VDD IDR TA MIN. 4.0 4.0 TYP. 5.0 5.0 MAX. 6.0 6.0 415 Unit V V mA C 0 60 Note When mounted on board (100 x 100 x 1 mm, glass epoxy) ELECTRICAL CHARACTERISTICS (Within recommended operating conditions unless otherwise specified) Parameter VM pin current with output transistor OFF VDD pin current Control pin high-level input current Control pin low-level input current Control pin high-level input voltage Control pin low-level input voltage H bridge circuit ON resistanceNote 1 Symbol IM IDD IIH IIL VIH VIL RON1 VIN = VDD VIN = 0 V Condition VM = 6.0 V, VDD = 6.0 V MIN. TYP. MAX. 1.0 0.1 1.0 -1.0 Unit A mA A A V V % 3.0 -0.3 VM = 5 V, VDD = 5 V Excitation direction <2>, <4>Note 2 2.0 VDD + 0.3 0.8 4.0 5 10 1.8 0.2 0.2 0.1 2.5 0.65 0.4 0.2 RON relative accuracy RON RON Excitation direction <1>, <3> VM = 5 V, VDD = 5 VNote 3 TA = 25 C, RM = 20 VM = 5 V, VDD = 5 VNote 3 H bridge output circuit propagation delay time H bridge output circuit propagation delay time H bridge output circuit rise time H bridge output circuit fall time tPHL tPLH tTHL tTLH s s s s TA = 25 C, RM = 20 Notes 1. Sum of ON resistance of top and bottom transistors 2. For the excitation direction, refer to FUNCTION TABLE. 3. IN1-IN4 tPHL tPLH IM tTHL tTLH 5 PD16814 TYPICAL CHARACTERISTICS RON vs. Tj Characteristics 4 4 RON = 20 RON vs. VDD (= VM) Characteristics H bridge ON resistance RON () H bridge ON resistance RON () 3 3 2 2 1 1 0 0 4.0 5.0 6.0 Supply voltage VDD (= VM) (V) 25 50 75 100 125 150 Operating junction temperature Tj (C) tPHL vs. TA Characteristics 4 H bridge output curcuit propagation delay time tPHL (s) H bridge output curcuit propagation delay time tPLH (s) tPLH vs. TA Characteristics 0.8 0.7 3 0.6 0.5 2 0.4 0.3 1 0.2 0.1 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Operating temperature TA (C) Operating temperature TA (C) 6 PD16814 STEPPING MOTOR EXCITATION TIMING CHART Inner circumference seek IN1 IN2 IN3 IN4 Excitation H1F direction <1> H2F <2> H1R <3> H2R <4> H1F <1> H2F <2> H1R Outer circumference seek IN1 IN2 IN3 IN4 Excitation H1F direction <4> H2R <3> H1R <2> H2F <1> H1F <4> H2R <3> H1R * Input signal wave when SEL = LOW (Brake mode) To set the H bridge in the Brake mode (refer to FUNCTION TABLE), use input signals that set the Brake mode from IN2 (IN4). Example 1 From Forward to Brake IN1/IN3 IN2/IN4 F Correct B IN1/IN3 IN2/IN4 F Incorrect B Example 2 From Reverse to Brake IN1/IN3 IN2/IN4 R Correct B IN1/IN3 IN2/IN4 R Incorrect B Remark This is because noise may be output due to the configuration of the internal circuit. 7 PD16814 NOTES ON PWM DRIVING CONTROL Keep in mind the following points when executing PWM. * Be sure to input the signals to control PWM driving from IN2 and IN4. * Because the logic of the PWM driving control inputs (IN2 and IN4) to create the Brake status is inverted depending on whether the Forward or Reverse mode is used, care must be exercised when PWM driving is controlled at a duty factor other than 50%. Example 1 PWM driving in Forward mode IN1/IN3 IN2/IN4 FBFBFBFBFBF Correct IN1/IN3 IN2/IN4 FBFBFBFBFBF Incorrect Example 2 PWM driving in Reverse mode IN1/IN3 IN2/IN4 RBRBRBRBRBR Correct IN1/IN3 IN2/IN4 RBRBRBRBRBR Incorrect Remark This is because noise may be output due to the configuration of the internal circuit. 8 PD16814 PACKAGE DIMENSION 16 PIN PLASTIC SOP (300 mil) 16 9 detail of lead end 1 A 8 H I J F G K E C D M N M B L NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM A B C D E F G H I J K L M N P MILLIMETERS 10.46 MAX. 0.78 MAX. 1.27 (T.P.) 0.40 +0.10 -0.05 0.10.1 1.8 MAX. 1.55 7.70.3 5.6 1.1 0.20 +0.10 -0.05 0.60.2 0.12 0.10 3 +7 -3 P INCHES 0.412 MAX. 0.031 MAX. 0.050 (T.P.) 0.016 +0.004 -0.003 0.0040.004 0.071 MAX. 0.061 0.3030.012 0.220 0.043 0.008 +0.004 -0.002 0.024 +0.008 -0.009 0.005 0.004 3 +7 -3 P16GM-50-300B-4 9 PD16814 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions shown below. For soldering methods and conditions other than those listed below, consult NEC. For details of the recommended soldering conditions, refer to Information Document "Semiconductor Device Mounting Technology Manual" (C10535E). Surface Mount Type Soldering Method Infrared reflow Soldering Condition Package peak temperature: 235 C, Time: 30 seconds MAX. (210 C MIN.) Number of times: 2 MAX. VPS VP15-00-2 Wave soldering WS60-00-1 Partial heating - Caution Do not use two or more soldering methods in combination (except partial heating). 10 PD16814 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS device behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. 11 PD16814 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2 |
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